Temperature-dependent magnetospectroscopy of HgTe quantum wells
نویسندگان
چکیده
منابع مشابه
Magnetic properties of HgTe quantum wells
Using analytical formulas as well as a finite-difference scheme, we investigate themagnetic field dependence of the energy spectra and magnetic edge states of HgTe/CdTe-based quantum wells in the presence of perpendicular magnetic fields and hard walls for the band-structure parameters corresponding to the normal and inverted regimes. Whereas one can not find counterpropagating, spin-polarized ...
متن کاملHigh-temperature quantum Hall effect in finite gapped HgTe quantum wells
T. Khouri,1,* M. Bendias,2 P. Leubner,2 C. Brüne,2 H. Buhmann,2 L. W. Molenkamp,2 U. Zeitler,1 N. E. Hussey,1 and S. Wiedmann1,† 1High Field Magnet Laboratory (HFML-EMFL), Radboud University, Nijmegen, The Netherlands 2Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074 Würzburg, Germany (Received 10 December 2015; revised manuscript received 2 March 2016; published 18 March ...
متن کاملQuantum spin hall insulator state in HgTe quantum wells.
Recent theory predicted that the quantum spin Hall effect, a fundamentally new quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We fabricated such sample structures with low density and high mobility in which we could tune, through an external gate voltage, the carrier conduction from n-type to p-type, passing through an insul...
متن کاملInvestigation of temperature-dependent photoluminescence in multi-quantum wells
Photoluminescence (PL) is a nondestructive and powerful method to investigate carrier recombination and transport characteristics in semiconductor materials. In this study, the temperature dependences of photoluminescence of GaAs-AlxGa1-xAs multi-quantum wells samples with and without p-n junction were measured under both resonant and non-resonant excitation modes. An obvious increase of photol...
متن کاملFabrication of samples for scanning probe experiments on quantum spin Hall effect in HgTe quantum wells
Related Articles Light emission from InGaAs:Bi/GaAs quantum wells at 1.3 μm AIP Advances 2, 042158 (2012) Polarization spectroscopy of N-polar AlGaN/GaN multi quantum wells grown on vicinal (000) GaN Appl. Phys. Lett. 101, 182103 (2012) Temperature dependent band offsets in PbSe/PbEuSe quantum well heterostructures Appl. Phys. Lett. 101, 172106 (2012) Universal behavior of photoluminescence in ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2016
ISSN: 2469-9950,2469-9969
DOI: 10.1103/physrevb.94.155421